PSMN2R2-40PS NXP Semiconductors, PSMN2R2-40PS Datasheet - Page 6

• Manufacturer Part Number: PSMN2R2-40PS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
[2]
PSMN2R2-40PS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
(A)
300
250
200
150
100
I
D
50
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
10
20
8
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
6
1
…continued
2
V
GS
(V) =
Conditions
I
see
I
V
I
V
S
S
S
DS
DS
5.5
= 25 A; V
= 25 A; dI
= 25 A; dI
3
Figure 17
= 20 V
= 20 V; T
003aad116
V
DS
(V)
4.5
Rev. 02 — 28 September 2009
5
GS
S
S
4
/dt = -100 A/µs; V
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C;
Fig 6.
R
(mΩ)
N-channel 40 V 2.1 mΩ standard level MOSFET
GS
GS
DSon
6
5
4
3
2
1
= 0 V;
= 0 V;
of drain current; typical values
Drain-source on-state resistance as a function
0
50
V
GS
(V) =
100
PSMN2R2-40PS
5
Min
-
-
-
150
Typ
0.85
53.7
80.75
200
10
© NXP B.V. 2009. All rights reserved.
250
003aad117
Max
1.2
-
-
I
D
5.5
(A)
20
6
8
300
Unit
V
ns
nC
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