PSMN3R5-30YL NXP Semiconductors, PSMN3R5-30YL Datasheet - Page 8

• Manufacturer Part Number: PSMN3R5-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN3R5-30YL
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
a
V
1.5
0.5
(V)
10
GS
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
10
V
0
DS
= 12 (V)
20
60
30
V
DS
120
= 19 (V)
40
All information provided in this document is subject to legal disclaimers.
003aac715
T
Q
j
G
( ° C)
03aa27
(nC)
180
50
Rev. 4 — 9 March 2011
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
3000
2500
2000
1500
1000
C
500
0
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
C
C
GS1
C
iss
rss
oss
I
Q
1
D
PSMN3R5-30YL
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2011. All rights reserved.
V
003aaa508
DS
003aac719
(V)
10
2
8 of 14