PSMN3R5-80ES NXP Semiconductors, PSMN3R5-80ES Datasheet - Page 3

• Manufacturer Part Number: PSMN3R5-80ES
• Description: Standard level N-channel MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN3R5-80ES
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
(A)
I
D
240
180
120
60
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf615
( ° C)
200
Rev. 02 — 19 April 2011
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 80 V; R
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
p
p
≤ 10 µs; T
≤ 10 µs; T
Fig 2.
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
P
(%)
der
= 100 °C; see
= 25 °C; see
120
= 50 Ω; unclamped
Figure 2
= 25 °C; I
80
40
0
function of mounting base temperature
mb
mb
Normalized total power dissipation as a
0
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
= 120 A;
Figure 1
50
Figure 1
PSMN3R5-80ES
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
Max
80
80
20
120
120
803
338
120
803
676
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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