PSMN3R5-80ES NXP Semiconductors, PSMN3R5-80ES Datasheet - Page 8

• Manufacturer Part Number: PSMN3R5-80ES
• Description: Standard level N-channel MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN3R5-80ES
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(A)
I
10
10
10
10
10
10
I
D
D
160
120
80
40
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
10
0.5
8
6
2
min
5.5
1
5
typ
4
V
GS
1.5
max
V
(V) = 4
All information provided in this document is subject to legal disclaimers.
GS
V
003aad685
DS
(V)
03aa35
4.5
(V)
2
6
Rev. 02 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN3R5-80ES
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
003aad280
T
003aaf608
j
j
(°C)
( ° C)
180
180
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