PSMN5R0-100ES NXP Semiconductors, PSMN5R0-100ES Datasheet - Page 7

• Manufacturer Part Number: PSMN5R0-100ES
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN5R0-100ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
(S)
R
g
(m Ω )
fs
DSon
250
200
150
100
50
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
5
…continued
60
10
90
15
All information provided in this document is subject to legal disclaimers.
V
003aaf723
003aaf725
I
GS
D
(A)
(V)
Conditions
I
see
I
V
S
S
Rev. 3 — 26 September 2011
120
GS
20
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
= 50 V
Fig 6.
Fig 8.
(A)
I
(A)
D
I
D
100
240
200
160
120
80
60
40
20
80
40
j
0
0
= 25 °C;
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
0.5
20.0
PSMN5R0-100ES
T
j
2
= 175 ° C
10.0
8.0
6.0
5.5
Min
-
-
-
1
4
Typ
0.8
75
235
1.5
V
© NXP B.V. 2011. All rights reserved.
T
V
GS
j
GS
003aaf724
003aaf726
= 25 ° C
V
(V)
DS
(V) =5
Max
1.2
-
-
4.5
(V)
6
2
Unit
V
ns
nC
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