PSMN7R0-100ES NXP Semiconductors, PSMN7R0-100ES Datasheet - Page 3

• Manufacturer Part Number: PSMN7R0-100ES
• Description: Standard level N-channel MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN7R0-100ES_3
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package
(A)
I
150
100
D
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
(1)
50
100
150
Conditions
T
T
V
V
t
T
T
t
V
V
All information provided in this document is subject to legal disclaimers.
T
p
p
003aad558
j
j
mb
mb
GS
GS
GS
sup
mb
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
(°C)
= 25 °C; see
= 25 °C;
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; unclamped; R
Rev. 03 — 23 February 2010
200
j
≤ 175 °C
j
mb
mb
j(init)
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
Fig 2.
= 25 °C; see
= 25 °C
GS
P
(%)
der
120
D
GS
80
40
= 20 kΩ
0
= 100 A;
Figure 1
function of mounting base temperature
Normalized total power dissipation as a
0
= 50 Ω
Figure 1
Figure 3
50
PSMN7R0-100ES
[1]
[1]
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
Max
100
100
20
85
100
475
269
175
175
260
100
475
315
03aa16
(°C)
200
V
°C
°C
°C
Unit
V
V
A
A
A
W
A
A
mJ
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