PSMN7R0-100XS NXP Semiconductors, PSMN7R0-100XS Datasheet - Page 9

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C

PSMN7R0-100XS

Manufacturer Part Number
PSMN7R0-100XS
Description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN7R0-100XS
Preliminary data sheet
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
V
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All information provided in this document is subject to legal disclaimers.
DS
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(V)
C
C
C
oss
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iss
10
Rev. 2 — 21 October 2011
2
Fig 15. Gate-source voltage as a function of gate
Fig 17. Input and reverse transfer capacitances as a
(pF)
C
12000
10000
V
(V)
8000
6000
4000
2000
GS
10
8
6
4
2
0
0
charge; typical values
function of gate-source voltage, typical values
0
0
V
DS
= 20V
50V
40
3
PSMN7R0-100XS
80V
80
6
120
9
© NXP B.V. 2011. All rights reserved.
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Q
V
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G
GS
(nC)
(V)
C
C
iss
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160
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