PSMN7R0-30YL NXP Semiconductors, PSMN7R0-30YL Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-30YL
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
1.5
0.5
GS
10
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
5
0
V
DS
= 12 (V)
10
60
15
V
120
DS
= 19 (V)
20
All information provided in this document is subject to legal disclaimers.
003aac725
Q
T
j
G
( ° C)
03aa27
(nC)
180
25
Rev. 04 — 9 March 2011
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
1600
1200
(pF)
800
400
C
0
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
C
C
C
oss
rss
Q
iss
GS1
1
I
Q
D
PSMN7R0-30YL
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2011. All rights reserved.
V
003aaa508
DS
003aac723
(V)
10
2
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