BLA1011-200R NXP Semiconductors, BLA1011-200R Datasheet - Page 3

200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz

BLA1011-200R

Manufacturer Part Number
BLA1011-200R
Description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz
Manufacturer
NXP Semiconductors
Datasheet

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BLA1011-200R
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NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLA1011-200R_1011S-200R_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
[1]
Table 6.
T
Table 7.
RF performance in a common source pulsed class-AB circuit; (t
and 1090 MHz; T
The BLA1011-200R and BLA1011S-200R are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
Symbol
Z
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
P
G
η
t
t
DSS
DSX
GSS
r
f
j
DS
fs
th(j-h)
D
(BR)DSS
GS(th)
DS
L
DS(on)
p
= 25
Thermal resistance is determined under RF operating conditions; t
= 36 V; f = 1030 MHz to 1090 MHz at rated load power.
°
C unless otherwise specified
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
transient thermal impedance from junction to
heatsink
Parameter
drain-source voltage
output power
power gain
drain efficiency
rise time
fall time
Thermal characteristics
Characteristics
Application information
All information provided in this document is subject to legal disclaimers.
h
= 25
BLA1011-200R; BLA1011S-200R
Rev. 01 — 23 February 2010
°
C; Z
th(mb-h)
= 0.15 K/W; I
Conditions
t
P
t
p
p
L
= 50 μs; δ = 2 %
= 50 μs; δ = 2 %
= 200 W
Conditions
V
V
V
V
V
V
GS
DS
GS
GS
DS
GS
DS
GS
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= ±20 V; V
= 9 V; I
Dq
= 150 mA; unless otherwise specified.
GS(th)
D
D
DS
D
D
= 3 mA
+ 9 V;
= 10 A
Conditions
T
= 300 mA
= 10 A
DS
h
= 36 V
= 25 °C
= 0 V
p
p
= 50 μs, δ = 10 %.
= 50
Avionics LDMOS transistors
Min
-
-
13
45
-
-
μ
s;
δ
Min
75
4
-
45
-
-
-
Typ
36
200
-
-
-
-
= 2 %); f = 1030 MHz
[1]
© NXP B.V. 2010. All rights reserved.
Typ
0.15
Typ
-
-
-
-
-
9
60
-
50
Max
50
Max Unit
-
5
1
-
1
-
-
Unit
K/W
Unit
V
W
dB
%
ns
ns
3 of 13
V
V
μA
A
μA
S

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