BLA1011-200R NXP Semiconductors, BLA1011-200R Datasheet - Page 5

• Manufacturer Part Number: BLA1011-200R
• Description: 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLA1011-200R_1011S-200R_1
Product data sheet
Fig 5.
Fig 7.
(dB)
G
20
15
10
p
5
0
1020
V
δ = 2 %
Power gain and drain efficiency a functions of
frequency; typical values
V
Load impedance as a function of frequency (series components); typical values
DS
DS
= 36 V; I
= 36 V; I
1040
Dq
Dq
G
p
= 150 mA; P
= 150 mA; P
1060
L
L
= 200 W; t
= 200 W; t
η
(W)
Z
D
1080
−2
−4
L
4
2
0
1020
All information provided in this document is subject to legal disclaimers.
f (MHz)
mgw037
p
p
= 50 μs;
= 50 μs; δ = 2 %
BLA1011-200R; BLA1011S-200R
Rev. 01 — 23 February 2010
1100
1040
80
60
40
20
0
(%)
η
D
1060
Fig 6.
(W)
R
X
Z
L
L
1080
i
1020
5
4
3
2
1
0
V
δ = 2 %
Input Impedance as a function of frequency
(series components); typical values
DS
f (MHz)
= 36 V; I
mgw039
1100
r
x
1040
i
i
Dq
= 150 mA; P
Avionics LDMOS transistors
1060
L
= 200 W; t
1080
© NXP B.V. 2010. All rights reserved.
f (MHz)
mgw038
p
= 50 μs;
1100
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