BLD6G22LS-50 NXP Semiconductors, BLD6G22LS-50 Datasheet - Page 4

• Manufacturer Part Number: BLD6G22LS-50
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Application information
BLD6G22L-50_BLD6G22LS-50
Product data sheet
8.1 Ruggedness in Doherty operation
8.2 Impedance information
Table 6.
Valid for both main and peak device.
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 8.3 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz; f = 2140 MHz; RF performance at V
V
Table 8.
Mode of operation: Pulsed CW; = 10 %; t
V
The BLD6G22L-50 and BLD6G22LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Table 9.
Measured load-pull data; typical values unless otherwise specified.
Symbol Parameter
I
g
R
Symbol
P
G
PAR
RL
ACPR
Symbol
P
f
MHz
2050
2110
2140
2170
2230
GSS
GS(amp)peak
GS(amp)peak
DS
fs
D
L(AV)
L(3dB)
DS(on)
p
in
O
= 28 V; I
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
output power at 3 dB gain compression
Characteristics
Application information
Application information
Typical impedance
Parameter
average output power
power gain
drain efficiency
output peak-to-average ratio
input return loss
adjacent channel power ratio
= 0 V; T
= 0 V; T
Dq
= 170 mA; P
All information provided in this document is subject to legal disclaimers.
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
case
case
= 25 C; unless otherwise specified; in a production circuit.
= 25 C; unless otherwise specified; in a production circuit.
Rev. 3 — 17 August 2010
BLD6G22L-50; BLD6G22LS-50
…continued
L
= 8 W (W-CDMA); f = 2140 MHz.
Z
9.4
11.4
12.3
12.2
11.8
S
12.3j
11.2j
7.3j
10.5j
9.3j
p
= 100 s; RF performance at V
Conditions
V
V
V
I
D
GS
DS
GS
= 1.085 A
P
Conditions
P
P
P
P
= 10 V; I
= 11 V; V
= V
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
Conditions
GS(th)
= 8 W
= 8 W
= 8 W
= 8 W
= 8 W
D
DS
+ 3.75 V;
= 1.55 A
DS
= 0 V
= 28 V; I
Z
5.5 7.6j
6.7 8.2j
7.0 7.5j
7.2 6.8j
5.4 5.5j
Min
46
Min
-
12.5
37
-
10
-
L
Dq
Min Typ Max
-
1.4
-
DS
= 170 mA;
Typ
8
14
40
7.6
17
Typ
55
= 28 V; I
30
© NXP B.V. 2010. All rights reserved.
-
2.2
0.52 0.736
Max
-
-
-
-
-
Max
-
24
Dq
140
-
= 170 mA;
Unit
W
dB
%
dB
dB
dBc
Unit
W
4 of 15
Unit
nA
S