BLD6G22LS-50 NXP Semiconductors, BLD6G22LS-50 Datasheet - Page 8

• Manufacturer Part Number: BLD6G22LS-50
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLD6G22L-50_BLD6G22LS-50
Product data sheet
Fig 11. Power gain as a function of average load
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
15
13
11
9
20
V
V
0.01 % probability on CCDF.
power; typical values
DS
GS(amp)peak
= 28 V; I
= 0 V; 2-carrier W-CDMA; PAR = 8.3 dB at
Dq
28
= 170 mA (main); T
(1)
(2)
(3)
36
P
L(AV)
case
All information provided in this document is subject to legal disclaimers.
001aam446
(dBm)
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
= 25 C;
44
Rev. 3 — 17 August 2010
BLD6G22L-50; BLD6G22LS-50
Fig 12. Drain efficiency as a function of average load
(%)
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
50
40
30
20
10
0
20
V
V
0.01 % probability on CCDF.
power; typical values
DS
GS(amp)peak
= 28 V; I
= 0 V; 2-carrier W-CDMA; PAR = 8.3 dB at
Dq
28
= 170 mA (main); T
36
P
L(AV)
© NXP B.V. 2010. All rights reserved.
case
001aam447
(dBm)
= 25 C;
(1)
(2)
(3)
44
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