BLF245B NXP Semiconductors, BLF245B Datasheet - Page 11

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

BLF245B

Manufacturer Part Number
BLF245B
Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Quantity
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Philips Semiconductors
2003 Aug 04
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
R
Fig.13 Input impedance as a function of frequency
GS
( )
Z i
= 10 ; P
10
10
5
0
5
0
Fig.15 Definition of MOS impedance.
(series components); typical values per
section.
L
= 30 W (total device).
Z i
100
DS
= 28 V; I
x i
r i
DQ
200
= 2
Z L
25 mA;
MBA379
300
f (MHz)
MGP188
400
11
handbook, halfpage
handbook, halfpage
Class-B operation; V
R
Fig.14 Load impedance as a function of frequency
Class-B operation; V
R
Fig.16 Power gain as a function of frequency;
GS
GS
(dB)
( )
Z L
G p
= 10 ; P
= 10 ; P
30
20
10
25
20
15
10
0
5
0
0
0
(series components); typical values per
section.
typical values per section.
L
L
= 30 W (total device).
= 30 W (total device).
100
100
DS
DS
= 28 V; I
= 28 V; I
DQ
DQ
200
200
= 2
= 2
R L
X L
25 mA;
25 mA;
Product specification
300
300
f (MHz)
BLF245B
f (MHz)
MGP189
MGP190
400
400

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