BLF245B NXP Semiconductors, BLF245B Datasheet - Page 6

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

BLF245B

Manufacturer Part Number
BLF245B
Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in a push-pull, common source, class-B test circuit.
Ruggedness in class-B operation
The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the
following conditions:
V
2003 Aug 04
handbook, halfpage
CW, class-B
h
DS
VHF push-pull power MOS transistor
= 25 C; R
V
Fig.8
MODE OF OPERATION
GS
= 28 V, f = 175 MHz at rated output power.
(pF)
C rs
= 0; f = 1 MHz.
20
10
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
th mb-h
10
= 0.3 K/W; unless otherwise specified.
20
(MHz)
30
175
f
V DS (V)
MGP184
40
V
(V)
28
DS
6
2
(mA)
I
DQ
25
(W)
P
30
L
typ. 18
(dB)
G
14
p
Product specification
BLF245B
typ. 65
(%)
55
D

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