BLF578XRS NXP Semiconductors, BLF578XRS Datasheet - Page 5

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band

BLF578XRS

Manufacturer Part Number
BLF578XRS
Description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BLF578XRS
Manufacturer:
NXP
Quantity:
1 400
NXP Semiconductors
BLF578XR_BLF578XRS
Objective data sheet
6.3 Ruggedness in class-AB operation
The BLF578XR and BLF578XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
V
Fig 2.
DS
= 50 V; I
V
Output capacitance as a function of drain-source voltage; typical values per
section
GS
Dq
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
= 40 mA; P
&
S)
RVV
Rev. 1 — 30 January 2012





L
= 1400 W pulsed; f = 225 MHz.

BLF578XR; BLF578XRS


9
'6

DDD
9

Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
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