BLF578 NXP Semiconductors, BLF578 Datasheet

LDMOS,RF,1000W,HF-500MHZ,50V

BLF578

Manufacturer Part Number
BLF578
Description
LDMOS,RF,1000W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF578

Drain Source Voltage Vds
110V
Continuous Drain Current Id
88A
Operating Frequency Range
225MHz
Rf Transistor Case
SOT-539A
No. Of Pins
4
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1.
Mode of operation
CW
pulsed RF
BLF578
Power LDMOS transistor
Rev. 02 — 4 February 2010
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Broadcast transmitter applications
Dq
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
of 40 mA, a t
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Application information
p
of 100 μs with δ of 20 %:
f
(MHz)
108
225
V
(V)
50
50
DS
P
(W)
1000
1200
L
Product data sheet
G
(dB)
26
24
p
η
(%)
75
71
D

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BLF578 Summary of contents

Page 1

... BLF578 Power LDMOS transistor Rev. 02 — 4 February 2010 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Mode of operation CW pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...

Page 2

... Ordering information Package Name Description - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 02 — 4 February 2010 BLF578 Power LDMOS transistor Simplified outline Graphic symbol [1] Min - −0.5 - − ...

Page 3

... 150 ° 100 μs; δ −2 − Conditions Min 2.5 mA 110 500 BLF578 Typ Unit [1][2] 0.14 K/W [3] 0.04 K/W 001aak924 (s) p Typ Max Unit - - V 1.7 2.25 V 1.3 1.8 V μA - 2.8 © NXP B.V. 2010. All rights reserved ...

Page 4

... Symbol Parameter η D Fig 2. 6.1 Ruggedness in class-AB operation The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V pulsed 225 MHz. BLF578_2 Product data sheet DC characteristics …continued C; per section unless otherwise specified. drain cut-off current gate leakage current ...

Page 5

... BLF578 electromigration (I , total device) D Rev. 02 — 4 February 2010 Power LDMOS transistor (1) (2) (3) (4) (5) ( BLF578 001aaj114 20 (A) © NXP B.V. 2010. All rights reserved ...

Page 6

... Power LDMOS transistor Z L Ω 3.7 − j0.2 drain 001aaf059 (dBm) 64 ideal ( mA 225 MHz δ ( 61.0 dBm (1260 W) L(1dB) ( 61.4 dBm (1400 W) L(3dB) Load Power as function of source power; typical values BLF578 001aak927 L ( (dBm 100 μs; p © NXP B.V. 2010. All rights reserved ...

Page 7

... ( 160 mA Dq Drain efficiency as a function of load power; typical values 80 (3) (2) (4) (1) η D (%) 100 400 700 1000 = 100 μs; δ mA 225 MHz ( ( ( ( ( typical values BLF578 001aak929 1300 1600 P (W) L 001aak933 (5) 1300 1600 P (W) L © NXP B.V. 2010. All rights reserved ...

Page 8

... Power LDMOS transistor T2 C13 C21 L10 C17 C19 C14 L11 C16 C18 C20 C22 C15 T2 C21 C13 C17 C19 C14 C16 C18 C20 C15 C22 BLF578 V DD C25 C28 R5 L1 output 50 Ω C24 L12 C23 R6 L2 C27 C26 V DD 001aaj123 C25 C28 L1 ...

Page 9

... mm; length = Ω; 0 Ω; 0 Ω; 0 Ω Rev. 02 — 4 February 2010 BLF578 Power LDMOS transistor Remarks TDK4532X7R1E475Mt020U Murata X7R 250 V [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] (L × × 2 × × × × EZ-141-AL-TP-M17 © NXP B.V. 2010. All rights reserved ...

Page 10

... EUROPEAN PROJECTION BLF578 SOT539A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 00-03-03 10-02-02 © NXP B.V. 2010. All rights reserved ...

Page 11

... I • Table 7 on page 4: changed some values. • Section 8.2.1 on page 6: changed some graphs. 20081211 Objective data sheet Rev. 02 — 4 February 2010 BLF578 Power LDMOS transistor Change notice Supersedes - BLF578_1 . th(j-c) . th(j-c) . GSq . DSX - - © NXP B.V. 2010. All rights reserved. ...

Page 12

... In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Rev. 02 — 4 February 2010 BLF578 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... For sales office addresses, please send an email to: BLF578_2 Product data sheet 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 4 February 2010 BLF578 Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF578 All rights reserved. Date of release: 4 February 2010 Document identifier: BLF578_2 ...

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