BLF6G15L-40BRN NXP Semiconductors, BLF6G15L-40BRN Datasheet
BLF6G15L-40BRN
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BLF6G15L-40BRN Summary of contents
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... BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP test model 1, 64 DPCH; PAR = 7 probability of 0.01% on CCDF carrier; ...
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... Thermal characteristics thermal resistance from junction to case T All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor Simplified outline Graphic symbol [ ...
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... Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3GPP test model 1; 64 DPCH; f unless otherwise specified. Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G15L-40BRN is capable of withstanding a load mismatch corresponding to VSWR = 10 :1 through all phases under the following conditions 330 mA BLF6G15L-40BRN Product data sheet Characteristics C per section ...
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... G p (1) (2) 21.5 (3) 21.0 20.5 20.0 19.5 19 Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor [ (Ω) 4.6 − j4.5 4.6 − j4.5 drain Z L 001aaf059 001aan080 70 D (%) 60 D (1) 50 ...
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... (W) L Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor 15 ACPR (dBc) (1) 25 (2) ( 3GPP, test model 1; 64 DPCH, PAR = 7 0.01 % probability per carrier. 5 MHz carrier spacing. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor C13 + C6 C5 C10 C11 C12 ...
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... 9.65 9.65 9.65 9.65 1.14 17.12 9.40 9.40 9.40 9.40 0.89 16.10 0.38 0.38 0.38 0.38 0.045 0.674 0.37 0.37 0.37 0.37 0.035 0.634 References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor ( 3.00 3.30 1.70 20.45 9.91 15.24 2.69 2.92 1.45 20.19 9.65 0.118 0.130 0.067 ...
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... CCDF LDMOS PAR DPCH RF VSWR W-CDMA 11. Revision history Table 12. Revision history Document ID Release date BLF6G15L-40BRN v.2 20101112 Modifications: BLF6G15L-40BRN v.1 20100914 BLF6G15L-40BRN Product data sheet Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G15L-40BRN All rights reserved. Date of release: 12 November 2010 ...