BLF6G15L-40BRN NXP Semiconductors, BLF6G15L-40BRN Datasheet - Page 4

• Manufacturer Part Number: BLF6G15L-40BRN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G15L-40BRN
Product data sheet
7.3.1 CW
7.2 Impedance information
7.3 Graphs
Table 9.
I
[1]
f
(MHz)
1480
1510
Dq
Fig 1.
Fig 2.
= 330 mA; main transistor V
Z
S
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
and Z
Definition of transistor impedance
Power gain and drain efficiency as function of load power; typical values
Typical impedance per section
L
defined in
All information provided in this document is subject to legal disclaimers.
(dB)
G
Figure
p
Rev. 2 — 12 November 2010
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
0
1.
DS
Z
(Ω)
3.2 − j6.3
4.4 − j6.5
= 28 V
S
(1)
(2)
(3)
[1]
10
gate
G
Z
p
S
20
001aaf059
Z
drain
D
BLF6G15L-40BRN
L
30
(1)
(2)
(3)
P
001aan080
L
(W)
Z
(Ω)
4.6 − j4.5
4.6 − j4.5
L
40
[1]
Power LDMOS transistor
70
60
50
40
30
20
10
0
(%)
D
© NXP B.V. 2010. All rights reserved.
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