BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet - Page 5

• Manufacturer Part Number: BLF6G20-180PN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G20-180PN_3
Product data sheet
Fig 4.
Fig 6.
(dB)
(dB)
G
G
p
p
22
20
18
16
14
22
20
18
16
14
0
0
V
f
2-carrier W-CDMA power gain and drain
efficiency as function of load power; typical
values
V
f
2-carrier W-CDMA power gain and drain
efficiency as function of load power; typical
values
2
2
DS
DS
= 1877.5 MHz; carrier spacing 5 MHz.
= 1877.5 MHz; carrier spacing 10 MHz.
= 32 V; I
= 32 V; I
G
G
D
p
D
p
Dq
Dq
20
20
= 1600 mA; f
= 1600 mA; f
1
1
40
40
= 1872.5 MHz;
= 1867.5 MHz;
P
P
L
L
001aai020
001aai022
(W)
(W)
60
60
Rev. 03 — 30 March 2009
40
30
20
10
0
40
30
20
10
0
(%)
(%)
D
D
Fig 5.
Fig 7.
ACPR,
ACPR
(dBc)
IMD3
(dBc)
20
30
40
50
60
20
30
40
50
60
0
V
f
2-carrier W-CDMA adjacent channel power
ratio as a function of load power; typical
values
0
V
f
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of load power; typical values
2
2
DS
DS
= 1877.5 MHz; carrier spacing 5 MHz.
= 1877.5 MHz; carrier spacing 10 MHz.
= 32 V; I
= 32 V; I
Dq
Dq
BLF6G20-180PN
20
20
= 1600 mA; f
= 1600 mA; f
Power LDMOS transistor
1
1
40
40
= 1872.5 MHz;
= 1867.5 MHz;
ACPR
IMD3
© NXP B.V. 2009. All rights reserved.
P
P
L
L
001aai021
001aai023
(W)
(W)
60
60
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