BLF6G27LS-100 NXP Semiconductors, BLF6G27LS-100 Datasheet - Page 11

100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF6G27LS-100

Manufacturer Part Number
BLF6G27LS-100
Description
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF6G27-100_BLF6G27LS-100
Product data sheet
Document ID
BLF6G27-100_BLF6G27LS-100 v.2 20100708
Modifications:
BLF6G27-100_BLF6G27LS-100_1
Revision history
Table 8.
Acronym
CCDF
CW
DPCH
ESD
FCH
FFT
IBW
IS-95
LDMOS
N-CDMA
PAR
PUSC
RF
TM1
VSWR
W-CDMA
WCS
WiMAX
Abbreviations
Release date
20100503
All information provided in this document is subject to legal disclaimers.
Data sheet status change to Product data sheet.
Table 1 on page
BLF6G27LS-100
Table 7 on page
BLF6G27LS-100
BLF6G27-100; BLF6G27LS-100
Description
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Test Model 1
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Wireless Communications Service
Worldwide interoperability for Microwave Access
Rev. 02 — 8 July 2010
Data sheet status
Product data sheet
Preliminary data sheet
1: A distinction has been made between BLF6G27-100 and
4: A distinction has been made between BLF6G27-100 and
Change notice
-
-
WiMAX power LDMOS transistor
Supersedes
BLF6G27-100_
BLF6G27LS-100_1
-
© NXP B.V. 2010. All rights reserved.
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