BLF6G27LS-100 NXP Semiconductors, BLF6G27LS-100 Datasheet - Page 8

• Manufacturer Part Number: BLF6G27LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27-100_BLF6G27LS-100
Product data sheet
Fig 7.
(dB)
G
p
19
18
17
16
15
14
2500
V
and 6 traffic channels (Walsh codes 8 to 13);
PAR = 9.7 dB at 0.01 % probability on the CCDF;
channel bandwidth = 1.2288 MHz.
Power gain and drain efficiency as a function
of frequency; typical values
DS
= 28 V; I
G
η
7.5 IS-95 broadband performance at 14 W average power
D
p
2550
Dq
= 900 mA; IS-95 with pilot, paging, sync
2600
2650
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aal785
2700
BLF6G27-100; BLF6G27LS-100
Rev. 02 — 8 July 2010
30
28
26
24
22
20
(%)
η
D
Fig 8.
ACPR
(dBc)
−40
−50
−60
−70
2500
V
and 6 traffic channels (Walsh codes 8 to 13);
PAR = 9.7 dB at 0.01 % probability on the CCDF;
channel bandwidth = 1.2288 MHz.
ACPR at 885 kHz and at 1980 kHz as a function
of frequency; typical values
DS
ACPR
ACPR
= 28 V; I
1980k
855k
2550
Dq
WiMAX power LDMOS transistor
= 900 mA; IS-95 with pilot, paging, sync
2600
2650
© NXP B.V. 2010. All rights reserved.
f (MHz)
001aal786
2700
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