BLF6G27LS-100 NXP Semiconductors, BLF6G27LS-100 Datasheet - Page 4

• Manufacturer Part Number: BLF6G27LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF6G27-100_BLF6G27LS-100
Product data sheet
7.1 Ruggedness in class-AB operation
Table 7.
Mode of operation: 1-carrier W-CDMA; single carrier W-CDMA TM1 with 64 DPCH and 100 %
clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; carrier channel bandwidth is 3.84 MHz;
f
T
[1]
The BLF6G27-100 and BLF6G27LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
G
RL
ACPR
1
η
ACPR
case
DS
D
= 2500 MHz; f
p
in
ACPR measured in 3.84 MHz channel bandwidth at ±5 MHz and ±10 MHz.
= 28 V; I
= 25
5M
10M
°
C; unless otherwise specified, in a class-AB production circuit.
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
(5 MHz)
adjacent channel power ratio
(10 MHz)
Dq
2
All information provided in this document is subject to legal disclaimers.
= 900 mA; P
= 2600 MHz, f
BLF6G27-100; BLF6G27LS-100
Rev. 02 — 8 July 2010
L
3
= 100 W (CW); f = 2500 MHz.
= 2700 MHz; RF performance at V
Conditions
P
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
BLF6G27-100
BLF6G27LS-100
BLF6G27-100
BLF6G27LS-100
BLF6G27-100
BLF6G27LS-100
= 14 W
= 14 W
= 14 W
= 14 W
= 14 W
WiMAX power LDMOS transistor
DS
[1]
[1]
= 28 V; I
Min
14.8 16.5 -
15
-
20
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Dq
Typ
17
−10
23
−40
−41
−59
−60
= 900 mA;
Max Unit
-
−6
-
−36
−37
−56
−57
4 of 14
dB
dB
dB
%
dBc
dBc
dBc
dBc