BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 2

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G22L-250P_22LS-250P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G22L-250P (SOT539A)
1
2
3
4
5
BLF7G22LS-250P (SOT539B)
1
2
3
4
5
Type number
BLF7G22L-250P
BLF7G22LS-250P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
BLF7G22L-250P; BLF7G22LS-250P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 2 — 28 October 2011
Flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
-
-
Min
0.5
65
© NXP B.V. 2011. All rights reserved.
3
4
3
4
Max
65
+13
65
+150
200
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
C
C