BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 4

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-250P_22LS-250P
Product data sheet
7.2 Impedance information
Table 8.
Measured load-pull data half device; I
[1]
f
(MHz)
2050
2110
2140
2170
2230
Fig 1.
Z
S
and Z
Definition of transistor impedance
Typical impedance
L
defined in
BLF7G22L-250P; BLF7G22LS-250P
All information provided in this document is subject to legal disclaimers.
Figure
Rev. 2 — 28 October 2011
1.
Z
()
1.50  j5.20
2.08  j5.64
2.16  j5.89
2.43  j5.97
3.94  j7.60
S
[1]
Dq
gate
= 1900 mA; V
Z
S
001aaf059
DS
drain
Z
L
= 28 V.
Z
()
3.03  j2.92
2.76  j2.70
2.31  j2.74
2.31  j2.74
2.10  j2.96
L
[1]
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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