BLF7G22LS-100P NXP Semiconductors, BLF7G22LS-100P Datasheet - Page 2

• Manufacturer Part Number: BLF7G22LS-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G22L-100P (SOT1121A)
1
2
3
4
5
BLF7G22LS-100P (SOT1121B)
1
2
3
4
5
Type number
BLF7G22L-100P
BLF7G22LS-100P -
Symbol
V
V
T
T
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
BLF7G22L-100P; BLF7G22LS-100P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 3 — 2 January 2012
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
Min
-
0.5
65
-
© NXP B.V. 2012. All rights reserved.
3
4
3
4
Max
65
+13
+150
200
Version
SOT1121A
SOT1121B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
C
C