BLF7G22LS-100P NXP Semiconductors, BLF7G22LS-100P Datasheet - Page 5

• Manufacturer Part Number: BLF7G22LS-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
7.3 One Tone CW
7.4 One Tone CW-Pulsed
Fig 2.
Fig 3.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
V
Power gain and drain efficiency as function of load power; typical values
V
Power gain and drain efficiency as a function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
BLF7G22L-100P; BLF7G22LS-100P
All information provided in this document is subject to legal disclaimers.
Dq
Dq
(dB)
(dB)
G
G
= 720 mA.
= 720 mA.
Rev. 3 — 2 January 2012
p
p
35
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
36
36
(1)
(1)
G
η
G
η
D
D
p
p
(2)
40
(2)
40
(3)
(3)
44
44
48
48
P
P
aaa-001309
aaa-001310
L
L
(dBm)
(dBm)
52
52
Power LDMOS transistor
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
(%)
(%)
η
η
D
D
© NXP B.V. 2012. All rights reserved.
5 of 14