BLF7G22LS-100P NXP Semiconductors, BLF7G22LS-100P Datasheet - Page 3

• Manufacturer Part Number: BLF7G22LS-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model
1, 1-64 PDPCH; f
RF performance at V
specified; in a class-AB production test circuit.
The BLF7G22L-100P and BLF7G22LS-100P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL

ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
5M

C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
DS
BLF7G22L-100P; BLF7G22LS-100P
All information provided in this document is subject to legal disclaimers.
1
= 28 V; I
= 2112.5 MHz; f
DS
= 28 V; I
Rev. 3 — 2 January 2012
Dq
= 720 mA; P
Dq
2
= 720 mA; T
= 2117.5 MHz; f
L
Conditions
V
V
V
V
V
V
I
D
= 100 W (CW); f = 2110 MHz.
GS
DS
GS
GS
DS
GS
DS
GS
= 2100 mA
case
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 25
3
GS(th)
GS(th)
= 2162.5 MHz; f
Conditions
T
case
D

Conditions
P
P
P
P
DS
C; 2 sections combined unless otherwise
D
D
= 0.6 mA
L(AV)
L(AV)
L(AV)
L(AV)
+ 3.75 V;
DS
+ 3.75 V;
= 60 mA
= 60 mA
= 28 V
= 80 C; P
= 0 V
= 20 W
= 20 W
= 20 W
= 20 W
Power LDMOS transistor
4
L
= 2167.5 MHz;
Min
65
1.5
-
-
-
-
-
= 20 W
Min Typ Max Unit
-
17.8 19.1 -
-
24
-
© NXP B.V. 2012. All rights reserved.
Typ
70
2
-
12.3
-
530
240
20
16 9
28.5 -
34 28
Typ
0.36
-
2.3
Max
2
-
200
-
-
-
3 of 14
Unit
K/W
W
dB
dB
%
dBc
Unit
V
V
A
A
nA
mS
m