BLF7G22LS-200 NXP Semiconductors, BLF7G22LS-200 Datasheet - Page 10

• Manufacturer Part Number: BLF7G22LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF7G22L-200_7G22LS-200
Product data sheet
CAUTION
Document ID
BLF7G22L-200_7G22LS-200 v.4 20110722
Modifications:
BLF7G22L-200_7G22LS-200 v.3 20110401
BLF7G22L-200_7G22LS-200 v.2 20101228
BLF7G22L-200_7G22LS-200 v.1 20100419
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Release date Data sheet status
•
Abbreviations
The status of this document has been changed to Product data sheet.
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G22L-200; BLF7G22LS-200
Preliminary data sheet -
Preliminary data sheet -
Objective data sheet
Product data sheet
Rev. 4 — 22 July 2011
Change notice Supersedes
-
-
BLF7G22L-200_7G22LS-200
v.3
BLF7G22L-200_7G22LS-200
v.2
BLF7G22L-200_7G22LS-200
v.1
-
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
10 of 13