BLF7G22LS-200 NXP Semiconductors, BLF7G22LS-200 Datasheet - Page 6

200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz

BLF7G22LS-200

Manufacturer Part Number
BLF7G22LS-200
Description
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF7G22L-200_7G22LS-200
Product data sheet
Fig 7.
Fig 9.
(dB)
(dB)
G
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
p
p
50
40
30
20
10
0
V
Spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on
Power gain and drain efficiency as functions
of average load power; typical values
0
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
power; typical values
the CCDF.
Drain efficiency as function of average load
DS
DS
= 28 V; I
= 28 V; I
7.5 2-carrier W-CDMA
G
η
D
p
Dq
Dq
40
40
= 1620 mA; f = 2140 MHz; Channel
= 1620 mA; Channel Spacing = 5 MHz;
80
80
P
P
L(AV)
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan069
001aan071
(W)
(W)
(1)
(2)
(3)
BLF7G22L-200; BLF7G22LS-200
120
120
Rev. 4 — 22 July 2011
50
40
30
20
10
0
(%)
η
D
Fig 8.
Fig 10. Adjacent power channel ratio (5 MHZ) as
ACPR
(dBc)
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
−20
−30
−40
−50
p
5M
0
0
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
Power gain as a function of average load
power; typical values
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
function of average load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
40
40
= 1620 mA; Channel Spacing = 5 MHz;
= 1620 mA; Channel Spacing = 5 MHz;
(1)
(2)
(3)
Power LDMOS transistor
80
80
P
P
L(AV)
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan070
001aan072
(1)
(2)
(3)
(W)
(W)
120
120
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