BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 2

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-90P (SOT1121A)
1
2
3
4
5
BLF7G27LS-90P (SOT1121B)
1
2
3
4
5
Type number
BLF7G27L-90P
BLF7G27LS-90P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G27L-90P; BLF7G27LS-90P
Rev. 2 — 10 November 2011
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
Min
-
0.5
-
65
-
© NXP B.V. 2011. All rights reserved.
3
4
3
4
Max
65
+13
18
+150
225
SOT1121B
Version
SOT1121A
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
C
C