BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 5

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Fig 3.
Fig 5.
APCR
PAR
(dB)
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
-30
-35
-40
-45
-50
-55
855
10
9
8
7
6
5
4
3
5
V
Single carrier IS-95 ACPR at 885 kHz as a
function of output power; typical values
5
V
Single carrier IS-95 peak-to-average power
ratio as a function of output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
15
15
Dq
Dq
= 720 mA.
= 720 mA.
25
25
(1)
(2)
(3)
35
35
(1)
(2)
(3)
45
45
All information provided in this document is subject to legal disclaimers.
aaa-000970
aaa-000972
P
P
L
L
BLF7G27L-90P; BLF7G27LS-90P
(W)
(W)
Rev. 2 — 10 November 2011
55
55
Fig 4.
Fig 6.
APCR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
120
100
110
1980
-50
-55
-60
-65
-70
90
80
70
5
5
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of output power; typical values
V
Single carrier IS-95 peak output power as a
function of output power; typical values
DS
DS
= 28 V; I
= 28 V; I
15
15
(1)
(2)
(3)
Dq
Dq
= 720 mA.
= 720 mA.
25
25
Power LDMOS transistor
35
35
© NXP B.V. 2011. All rights reserved.
45
45
aaa-000971
aaa-000973
(1)
(2)
(3)
P
P
L
L
(W)
(W)
55
55
5 of 14