BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 8

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
Fig 13. Single carrier W-CDMA peak-to-average power
APCR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
-25
-35
-45
-55
5M
8
7
6
5
4
3
5
V
function of output power; typical values
5
V
ratio as a function of output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
15
15
Dq
Dq
(1)
(2)
(3)
= 720 mA.
= 720 mA.
25
25
35
35
(1)
(2)
(3)
45
45
All information provided in this document is subject to legal disclaimers.
aaa-000978
aaa-000980
P
P
L
L
BLF7G27L-90P; BLF7G27LS-90P
(W)
(W)
Rev. 2 — 10 November 2011
55
55
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
Fig 14. Single carrier W-CDMA peak output power as a
APCR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
140
120
100
-45
10M
-50
-55
-60
-65
-70
80
60
40
5
5
V
function of output power; typical values
V
function of output power; typical values
DS
DS
= 28 V; I
= 28 V; I
15
15
Dq
Dq
= 720 mA.
= 720 mA.
25
25
(1)
(2)
(3)
Power LDMOS transistor
35
35
© NXP B.V. 2011. All rights reserved.
45
45
aaa-000979
aaa-000981
(1)
(2)
(3)
P
P
L
L
(W)
(W)
55
55
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