BLF871S NXP Semiconductors, BLF871S Datasheet - Page 3

• Manufacturer Part Number: BLF871S
• Description: A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF871_BLF871S_4
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Table 6.
T
[1]
Symbol
V
V
T
T
Symbol
R
Symbol Parameter
V
V
I
I
I
R
C
C
C
DSS
DSX
GSS
j
DS
GS
stg
j
(BR)DSS
GS(th)
th(j-c)
DS(on)
iss
oss
rss
= 25
R
I
D
th(j-c)
is the drain current.
°
C unless otherwise specified.
is measured under RF conditions.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance V
input capacitance
output capacitance
reverse transfer capacitance
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction to case
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Rev. 04 — 19 November 2009
Conditions
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
= 3.7 A
Conditions
= 10 V; I
= 10 V
= 0 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
BLF871; BLF871S
D
DS
DS
DS
DS
D
= 1.12 mA
+ 3.75 V;
+ 3.75 V;
DS
= 112 mA
= 40 V
= 40 V;
= 40 V;
= 40 V;
= 0 V
Conditions
T
P
case
L(AV)
UHF power LDMOS transistor
= 80 °C;
= 50 W
Min
-
−0.5
−65
-
[1]
[1]
[1]
Min Typ Max
89
1.4
-
16.7 20
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
89
+13
+150
200
-
-
-
-
210 -
95
30
1
[1]
Typ
0.95
105.5 V
2.4
1.4
-
140
-
-
-
Unit
V
V
°C
°C
Unit
K/W
3 of 19
Unit
V
μA
A
nA
mΩ
pF
pF
pF