BLF871S NXP Semiconductors, BLF871S Datasheet - Page 7

• Manufacturer Part Number: BLF871S
• Description: A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 7.
(dB)
G
(1) V
(2) V
p
22
20
18
16
14
400
I
test circuit as described in
2-Tone power gain and drain efficiency as a
function of frequency; typical values
Dq
DS
DS
= 0.5 A; measured in a common source broadband
= 40 V; P
= 42 V; P
7.2.1 2-Tone
500
7.2 Broadband RF figures
G
η
D
p
L(AV)
L(AV)
600
= 45 W
= 50 W
700
Section
(2)
(1)
(2)
(1)
8.
800
001aaj282
f (MHz)
Rev. 04 — 19 November 2009
900
70
60
50
40
30
(dB)
η
D
Fig 8.
IMD3
(dBc)
(1) V
(2) V
−20
−40
−60
0
400
I
test circuit as described in
2-Tone third order intermodulation distortion
as a function of frequency; typical values
Dq
DS
DS
= 0.5 A; measured in a common source broadband
= 40 V; P
= 42 V; P
500
BLF871; BLF871S
L(AV)
L(AV)
600
UHF power LDMOS transistor
= 45 W
= 50 W
700
Section
(2)
(1)
8.
© NXP B.V. 2010. All rights reserved.
800
001aaj283
f (MHz)
900
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