BLF888B NXP Semiconductors, BLF888B Datasheet - Page 4

• Manufacturer Part Number: BLF888B
• Description: A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF888B_BLF888BS
Product data sheet
Table 7.
RF characteristics in NXP production narrowband test circuit; T
specified.
[1]
[2]
[3]
Symbol
DVB-T (8k OFDM), class-AB
V
I
P
G

IMD
PAR
Dq
Fig 1.
D
DS
L(AV)
p
I
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
shldr
dq
for total device
V
Output capacitance as a function of drain-source voltage; typical values per
section
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
GS
RF characteristics
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
oss
Rev. 1 — 17 October 2011
400
300
200
100
0
0
…continued
20
BLF888B; BLF888BS
Conditions
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
40
V
DS
001aao006
case
(V)
UHF power LDMOS transistor
= 25
60
[1]
[2]
[3]

C unless otherwise
Min Typ Max Unit
-
-
120 -
20
30
-
-
© NXP B.V. 2011. All rights reserved.
50
1.3
21
33
31 27
8.2
-
-
-
-
-
-
4 of 17
V
A
W
dB
%
dB
dBc