BLF888B NXP Semiconductors, BLF888B Datasheet - Page 5

• Manufacturer Part Number: BLF888B
• Description: A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF888B_BLF888BS
Product data sheet
Fig 2.
(dB)
G
p
24
22
20
18
16
14
12
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
function of load power; typical values
DS
= 50 V; I
7.1.1 2-Tone
100
7.1 Narrowband RF figures
G
η
D
p
Dq
= 1.3 A; measured in a common source
200
300
400
All information provided in this document is subject to legal disclaimers.
P
001aao018
L(AV)
(W)
500
Rev. 1 — 17 October 2011
60
50
40
30
20
10
0
(%)
η
D
Fig 3.
(dB)
G
p
24
22
20
18
16
14
12
V
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
0
DS
BLF888B; BLF888BS
= 50 V; I
100
IMD3
G
p
Dq
= 1.3 A; measured in a common source
200
UHF power LDMOS transistor
300
400
© NXP B.V. 2011. All rights reserved.
P
001aao019
L(AV)
(W)
500
0
-10
-20
-30
-40
-50
-60
IMD3
(dBc)
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