STTH1002C-Y STMicroelectronics, STTH1002C-Y Datasheet - Page 2

• Manufacturer Part Number: STTH1002C-Y
• Description: Automotive high efficiency ultrafast diode
• Manufacturer: STMicroelectronics

1
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
2/9
Symbol
Symbol
Symbol
I
R
R
V
F(RMS)
I
V
I
I
F(AV)
T
FSM
th(j-c)
th(j-c)
R
RRM
T
F
stg
(1)
(2)
j
Repetitive peak reverse voltage
Forward rms current
Avarage forward current δ = 0.5
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
p
p
Characteristics
Absolute ratings (limiting values, per diode)
Thermal parameters
When the diodes 1 and 2 are used simultaneously:
Δ T
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.73 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
j
(diode1) = P(diode1) x R
Parameter
F(AV)
+ 0.032 I
F
2
(RMS)
Parameter
Parameter
th(j-c)
Doc ID 17536 Rev 2
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 150 °C
= 150 °C
(per diode) + P(diode2) x R
Test conditions
V
I
I
I
I
T
T
T
T
t
F
F
F
F
p
c
c
c
c
R
= 10 ms sinusoidal
= 5 A
= 10 A
= 5 A
= 10 A
= 155 °C
= 150 °C
= 135 °C
= 125 °C
= V
RRM
D
DPAK
Per diode
Per device
Per diode
Per device
Per diode
Per device
Min.
2
PAK
th(c)
Typ.
0.78
3
Value (max)
-65 to + 175
-40 to + 175
Value
200
4.0
2.5
1.0
20
10
10
16
50
5
8
Max.
1.25
0.89
1.05
1.1
40
5
°C/W
Unit
Unit
Unit
°C
°C
µA
V
A
A
A
V