STTH1002C-Y STMicroelectronics, STTH1002C-Y Datasheet - Page 4

• Manufacturer Part Number: STTH1002C-Y
• Description: Automotive high efficiency ultrafast diode
• Manufacturer: STMicroelectronics

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Figure 1.
Figure 3.
Figure 5.
100
100
90
80
70
60
50
40
30
20
10
10
0
60
50
40
30
20
10
0.00
0
0
I
C(pF)
0.0
FM
I (A)
M
(A)
0.25
P = 2W
0.1
0.50
Peak current versus duty cycle
(per diode)
Forward voltage drop versus
forward current
(maximum values, per diode)
reverse voltage applied
(typical values, per diode)
Junction capacitance versus
0.2
0.75
P = 5W
50
P = 10W
0.3
1.00
0.4
T =150°C
1.25
j
V
V (V)
FM
1.50
0.5
100
δ
R
(V)
1.75
0.6
2.00
T =25°C
0.7
j
2.25
150
I
δ
0.8
M
=tp/T
V
2.50
OSC
F=1MHz
T =25°C
=30mV
j
T
0.9
Doc ID 17536 Rev 2
2.75
RMS
tp
1.0
3.00
200
Figure 2.
Figure 4.
Figure 6.
240
220
200
180
160
140
120
100
100
1.0
0.1
80
60
40
20
90
80
70
60
50
40
30
20
10
1.E-03
0
0
0.00
10
Q (nC)
Z
I
FM
th(j-c)
rr
Single pulse
I =5A
V =160V
F
R
(A)
0.25
/R
0.50
th(j-c)
Forward voltage drop versus
forward current
(typical values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse recovery charges versus
dI
0.75
F
/dt (typical values, per diode)
1.E-02
1.00
T =150°C
j
1.25
dI /dt(A/µs)
T =125°C
j
V
F
t (s)
p
FM
1.50
100
(V)
1.75
1.E-01
T =25°C
j
2.00
2.25
T =25°C
j
2.50
2.75
1.E+00
3.00
1000