STTH1002C-Y STMicroelectronics, STTH1002C-Y Datasheet - Page 5

• Manufacturer Part Number: STTH1002C-Y
• Description: Automotive high efficiency ultrafast diode
• Manufacturer: STMicroelectronics

Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy
Figure 7.
Figure 9.
80
70
60
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
t (ns)
25
rr
Q ;
I =5A
V =160V
F
I =5A
V =160V
R
rr
F
R
I
RM
[T ]/Q ;I
j
50
printed circuit board FR4, copper thickness = 35 µm) for DPAK
Reverse recovery time versus dI
(typical values, per diode)
junction temperature
Dynamic parameters versus
rr RM
[T =125°C]
I
RM
j
75
dI /dt(A/µs)
T =125°C
F
j
Q
rr
T (°C)
100
j
100
90
80
70
60
50
40
30
20
10
0
T =25°C
100
j
0
R
th(j-a)
2
(°C/W)
125
4
Doc ID 17536 Rev 2
6
F
1000
150
S(Cu)(cm²)
/dt
8
Figure 8.
Figure 10. Thermal resistance junction to
10
80
70
60
50
40
30
20
10
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
10
0
I
R
12
RM
th(j-a)
I =5A
V =160V
F
R
(A)
2
Epoxy printed circuit board FR4, copper thickness = 35 µm
14
(°C/W)
Peak reverse recovery current
versus dI
(typical values, per diode)
ambient versus copper surface
under tab for D
4
16
6
18
S(Cu)(cm²)
dI /dt(A/µs)
8
20
F
F
/dt
100
T =125°C
10
j
2
PAK
12
14
T =25°C
j
16
18
1000
20
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