ST7LITEU09 STMicroelectronics, ST7LITEU09 Datasheet - Page 107

• Manufacturer Part Number: ST7LITEU09
• Description: ST7ULTRALITE - 8-BIT MCU WITH 2K SINGLE VOLTAGE FLASH MEMORY, ADC, TIMERS
• Manufacturer: STMicroelectronics

Specifications of ST7LITEU09

• 2k Bytes Single Voltage Flash Program Memory With Read-out Protection, In-circuit And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55°C
• 128 Bytes Data Eeprom. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55°C
• Clock Sources: internal trimmable 8MHz RC oscillator, internal low power, low frequency RC oscillator or external clock
• Five Power Saving Modes: Halt, Auto Wake Up from Halt, Active-Halt, Wait and Slow
• One 8-bit Lite Timer (lt) With Prescaler Including: watchdog, 1 realtime base and 1 input capture

ST7LITEU05 ST7LITEU09
13.7
13.7.1
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
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A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
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Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behaviour is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Electrical characteristics
DD
and V
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