ST92150CV1Q-Auto STMicroelectronics, ST92150CV1Q-Auto Datasheet - Page 50

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ST92150CV1Q-Auto

Manufacturer Part Number
ST92150CV1Q-Auto
Description
8-bit MCU for automotive
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST92150CV1Q-Auto

Internal Memory
Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
Minimum Instruction Time
83 ns (24 MHz int. clock)
ST92124xxx-Auto/150xxxxx-Auto/250xxxx-Auto
3 SINGLE VOLTAGE FLASH & E
3.1 INTRODUCTION
The Flash circuitry contains one array divided in
two main parts that can each be read independ-
ently. The first part contains the main Flash array
for code storage, a reserved array (TestFlash) for
system routines and a 128-byte area available as
one time programmable memory (OTP). The sec-
Figure 30. Flash Memory Structure (Example for 64K Flash device)
50/430
9
22CFFFh
231F80h
000000h
002000h
004000h
2203FFh
230000h
228000h
220000h
010000h
Hardware emulated EEPROM sectors
User OTP and Protection registers
Emulated EEPROM
sense amplifiers
sense amplifiers
Sector F0
Sector F1
48 Kbytes
TestFlash
Sector F2
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes (Reserved)
1 Kbyte
3 TM
(EMULATED EEPROM)
ond part contains the two dedicated Flash sectors
used for EEPROM Hardware Emulation.
The write operations of the two parts are managed
by an embedded Program/Erase Controller.
Through a dedicated RAM buffer the Flash and the
E
3 TM
can be written in blocks of 16 bytes.
Address
Program / Erase
RAM buffer
16 bytes
Interface
Controller
Register
Data

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