STFI20NK50Z STMicroelectronics, STFI20NK50Z Datasheet

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STFI20NK50Z

Manufacturer Part Number
STFI20NK50Z
Description
N-channel 500 V, 0.23 Ohm, 17 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PakFP
Manufacturer
STMicroelectronics
Datasheet

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STFI20NK50Z
Manufacturer:
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Features
1. Limited by maximum junction temperature
Applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1.
November 2011
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STFI20NK50Z
Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Switching applications
Type
STFI20NK50Z
Order codes
N-channel 500 V, 0.23 Ω , 17 A Zener-protected SuperMESH™
Device summary
500 V
V
DSS
< 0.27 Ω
R
max
DS(on)
20NK50Z
Marking
17 A
I
D
(1)
Doc ID 019007 Rev 2
40 W
P
TOT
Figure 1.
Package
I
Power MOSFET in I²PakFP
2
PakFP
G(1)
Internal schematic diagram
STFI20NK50Z
1
I
2
PakFP
2
D(2)
S(3)
3
Packaging
Tube
Preliminary data
www.st.com
AM01476v1
1/13
13

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STFI20NK50Z Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Power MOSFET in I²PakFP TOT ( Figure 1. Marking Package 2 20NK50Z I PakFP Doc ID 019007 Rev 2 STFI20NK50Z Preliminary data PakFP Internal schematic diagram D(2) G(1) S(3) Packaging Tube AM01476v1 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 019007 Rev 2 STFI20NK50Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STFI20NK50Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage DS V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Gate-source human body model ESD (R=1,5 kΩ , C=100 pF) Insulation withstand voltage (RMS) from all three ...

Page 4

... MHz = 250 4.7 Ω (see Figure 400 (see Figure 16 . DSS Doc ID 019007 Rev 2 STFI20NK50Z Min. Typ. 500 = 125 ° 100 µ 8.5 A 0.23 D Min. Typ 2600 - 328 640 V - 187 ...

Page 5

... STFI20NK50Z Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulsed: pulse duration=300µ ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/13 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 019007 Rev 2 STFI20NK50Z ...

Page 7

... STFI20NK50Z Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Maximum avalanche energy vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B Doc ID 019007 Rev 2 Electrical characteristics vs temperature VDSS 7/13 ...

Page 8

... Electrical characteristics Figure 14. Source-drain diode forward characteristic 8/13 Doc ID 019007 Rev 2 STFI20NK50Z ...

Page 9

... STFI20NK50Z 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100μH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 019007 Rev 2 STFI20NK50Z ® ...

Page 11

... STFI20NK50Z 2 Table 9. I PakFP mechanical data Dim Figure 21. I PakFP drawing mm Min. Typ. 4.40 2.50 2.50 0.65 0.45 0.75 4.95 - 10.00 21.00 13.20 10.55 2.70 0.85 7.30 Doc ID 019007 Rev 2 Package mechanical data Max. 4.60 2.70 2.75 0.85 0.70 1.00 1.20 5.20 10.40 23.00 14.10 10.85 3.20 1.25 7.50 11/13 ...

Page 12

... Revision history 5 Revision history Table 10. Document revision history Date 01-Jul-2011 11-Nov-2011 12/13 Revision 1 First release. Figure 2: Safe operating area 2 have been added. Doc ID 019007 Rev 2 STFI20NK50Z Changes and Figure 3: Thermal impedance ...

Page 13

... STFI20NK50Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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