STFI20NK50Z STMicroelectronics, STFI20NK50Z Datasheet - Page 3

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STFI20NK50Z

Manufacturer Part Number
STFI20NK50Z
Description
N-channel 500 V, 0.23 Ohm, 17 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PakFP
Manufacturer
STMicroelectronics
Datasheet

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STFI20NK50Z
1
Electrical ratings
Table 2.
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
1.
Symbol
I
Symbol
SD
Limited by maximum junction temperature.
dv/dt
AR
Symbol
R
R
E
I
DM
P
ESD
V
V
V
T
thj-case
AS
thj-amb
< 17 A, di/dt < 200 A/µs, V
TOT
I
I
T
ISO
GS
DS
stg
(1)
D
D
j
(2)
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Repetitive or non repetitive avalanche current
Single pulse avalanche energy
(starting T
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Gate-source human body model
(R=1,5 kΩ , C=100 pF)
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; T
Peak diode recovery voltage slope
Storage temperature
Max operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
J
=25 °C, I
DD
Doc ID 019007 Rev 2
=80% V
D
=I
Parameter
Parameter
C
AR
Parameter
= 25 °C
(BR)DSS
, V
DD
=50 V)
C
C
= 25 °C
= 100 °C
C
= 25 °C)
-55 to 150
10.71
Value
Value
2500
17
± 30
500
150
62.5
4.5
3.1
68
40
Value
6
850
(1)
17
Electrical ratings
(1)
°C/W
°C/W
V/ns
Unit
Unit
Unit
kV
°C
°C
W
mJ
V
V
A
A
A
V
A
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