STFI20NK50Z STMicroelectronics, STFI20NK50Z Datasheet - Page 4

• Manufacturer Part Number: STFI20NK50Z
• Description: N-channel 500 V, 0.23 Ohm, 17 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PakFP
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
t
t
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss eq.
oss
t
t
iss
rss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
(V
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
Doc ID 019007 Rev 2
I
V
V
V
V
V
D
GS
GS
DS
DS
DS
V
V
V
V
V
R
(see
V
V
(see
=1 mA
GS
GS
DS
DS
DS
DD
G
DD
= 500 V
= 500 V, T
= V
= ± 20 V
= 10 V, I
= 4.7 Ω, V
= 15 V, I
= 25 V, f = 1 MHz,
=0, V
Test conditions
= 0
= 250 V, I
= 400 V, I
= 10 V
Figure 15
Figure 16
GS
Test conditions
, I
D
DS
D
= 100 µA
C
= 8.5 A
D
= 0 to 640 V
= 125 °C
D
GS
D
)
)
= 8.5 A
= 8.5 A,
= 17 A,
= 10 V
Min.
Min.
500
3
-
-
-
-
-
2600
Typ.
3.75
0.23
Typ.
15.5
328
187
13
72
28
20
70
15
85
42
oss
STFI20NK50Z
when V
Max. Unit
± 10
0.27
Max.
119
4.5
50
1
DS
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S