AP2302AGN-HF Advanced Power Electronics Corp., AP2302AGN-HF Datasheet
AP2302AGN-HF
Manufacturer Part Number
AP2302AGN-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D SOT-23 G Parameter 4. 4. Parameter 3 AP2302AGN-HF Halogen-Free Product BV 20V DSS R 42mΩ DS(ON Rating Units 4.6 A 3.7 ...
... AP2302AGN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
... D V =4.5V G 1.6 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 I =250uA D 1 0.8 0.6 0.4 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP2302AGN- =150 C 5.0V A 4.5V 3.5V 2.5V V =2. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...
... AP2302AGN- = =10V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this 10 area limited by R DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...