AP2302AGN-HF Advanced Power Electronics Corp., AP2302AGN-HF Datasheet - Page 4

• Manufacturer Part Number: AP2302AGN-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2302AGN-HF

• Vds: 20V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Rds(on) / Max(m?) Vgs@2.5v: 60
• Qg (nc): 6.5
• Qgs (nc): 1
• Qgd (nc): 2.5
• Id(a): 4.6
• Pd(w): 1.38
• Configuration: Single N
• Package: SOT-23

AP2302AGN-HF
0.01
100
0.1
10
1
8
6
4
2
0
0.01
Fig 9. Maximum Safe Operating Area
0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
V
90%
10%
Operation in this
V
area limited by
I
V
DS
Single Pulse
D
R
GS
T
DS(ON)
DS
=4A
=10V
A
=25
V
2
Q
DS
0.1
o
t
G
C
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
4
r
1
6
t
d(off)
10
t
8
f
100us
1ms
10ms
100ms
1s
DC
100
10
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
0.001
0.01
500
400
300
200
100
0.1
0
0.0001
1
1
Fig 12. Gate Charge Waveform
0.02
4.5V
0.01
Single Pulse
0.05
V
0.1
0.2
0.001
G
DUTY=0.5
5
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
9
Q
Q
0.1
Charge
G
GD
13
1
Duty factor = t/T
Peak T
Rthja = 270℃/W
17
P
DM
j
10
= P
DM
t
x R
thja
T
f=1.0MHz
21
+ T
C
100
C
C
a
oss
iss
rss
Q
1000
25
4