AP2302AGN-HF Advanced Power Electronics Corp., AP2302AGN-HF Datasheet - Page 3

• Manufacturer Part Number: AP2302AGN-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2302AGN-HF

• Vds: 20V
• Vgs: ±8V
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Rds(on) / Max(m?) Vgs@2.5v: 60
• Qg (nc): 6.5
• Qgs (nc): 1
• Qgd (nc): 2.5
• Id(a): 4.6
• Pd(w): 1.38
• Configuration: Single N
• Package: SOT-23

30
20
10
50
40
30
20
0
8
6
4
2
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
0.2
1
V
V
V
GS
DS
SD
1
, Gate-to-Source Voltage (V)
Reverse Diode
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.4
2
T
j
=150
0.6
2
3
I
T
D
A
o
T
=3A
=25
C
A
=25
0.8
o
4
C
o
C
3
T
V
j
=25
1
5
G
=2.0V
5.0V
4.5V
3.5V
2.5V
o
C
1.2
4
6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig 2. Typical Output Characteristics
20
16
12
1
8
4
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
I
I
V
D
D
G
v.s. Junction Temperature
=250uA
=4A
=4.5V
V
T
Junction Temperature
DS
T
j
1
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
A
=150
AP2302AGN-HF
50
o
50
2
C
100
100
3
o
o
C )
C)
V
G
=2.0V
5.0V
4.5V
3.5V
2.5V
150
150
4
3