AP9435GM Advanced Power Electronics Corp., AP9435GM Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9435GM

Manufacturer Part Number
AP9435GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9435GM

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
14.6
Qgs (nc)
18
Qgd (nc)
3.7
Id(a)
-5.3
Pd(w)
2.5
Configuration
Single P
Package
SO-8

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Company
Part Number
Manufacturer
Quantity
Price
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AP9435GM
Manufacturer:
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Quantity:
20 000
Company:
Part Number:
AP9435GM
Quantity:
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Company:
Part Number:
AP9435GM
Quantity:
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Part Number:
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Part Number:
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Quantity:
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Part Number:
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Quantity:
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▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
3
3
D
D
SO-8
D
D
3
S
S
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
Max.
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
0.02
-5.3
-4.7
±20
-30
-20
2.5
DS(ON)
DSS
Value
50
AP9435GM
D
S
200821072-1/4
50mΩ
-5.3A
-30V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A

Related parts for AP9435GM

AP9435GM Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP9435GM RoHS-compliant Product BV -30V DSS R 50mΩ DS(ON) I -5. Rating Units -30 ±20 -5.3 -4.7 -20 2.5 0.02 W/℃ ...

Page 2

... AP9435GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 - -10V G 1.4 1 0.6 - Fig 4. Normalized On-Resistance 1.6 1.4 1.2 1 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP9435GM -10V o -7.0V T =150 C A -5.0V -4.5V V =-4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j v.s. Junction Temperature 0 ...

Page 4

... AP9435GM -5. -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 0 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform 1000 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9435GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW: ...

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