AP9435GM Advanced Power Electronics Corp., AP9435GM Datasheet - Page 2

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9435GM

Manufacturer Part Number
AP9435GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9435GM

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
50
Rds(on) / Max(m?) Vgs@4.5v
90
Qg (nc)
14.6
Qgs (nc)
18
Qgd (nc)
3.7
Id(a)
-5.3
Pd(w)
2.5
Configuration
Single P
Package
SO-8

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BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
Electrical Characteristics@T
Source-Drain Diode
t
Notes:
AP9435GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-5.3A
=-1A
G
D
=-2.1A, V
=-5A,
=15Ω
=3.3Ω,V
=V
=-10V, I
=-30V, V
=-24V, V
=-15V
=-15V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-10V
=0V
GS
V
Test Conditions
Test Conditions
, I
GS
D
D
=-250uA
GS
=-250uA
D
GS
D
=0
D
GS
GS
=-5A
=-5A
=-4A
=0V
=-10V
V
=0V
=0V
,
Min.
Min.
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14.6
Typ.
Typ.
570
1.8
3.7
6.6
7.7
9.3
22
80
75
18
11
5
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
-1.2
-25
50
90
-3
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2/4

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