AP9435GM Advanced Power Electronics Corp., AP9435GM Datasheet - Page 3

• Manufacturer Part Number: AP9435GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9435GM

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 50
• Rds(on) / Max(m?) Vgs@4.5v: 90
• Qg (nc): 14.6
• Qgs (nc): 18
• Qgd (nc): 3.7
• Id(a): -5.3
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

10.00
8.00
6.00
4.00
2.00
0.00
20
16
12
70
60
50
40
30
8
4
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0.2
0
2
Fig 5. Forward Characteristic of
-V
0.4
-V
-V
Reverse Diode
SD
DS
GS
1
4
, Source-to-Drain Voltage (V)
T
C
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
j
0.6
=150
o
0.8
2
6
T
T
I
A
A
D
=25
=25
= -4A
o
1
℃
C
T
3
8
j
V
=25
G
1.2
=-4.0V
o
-7.0V
-5.0V
-4.5V
-10V
C
1.4
4
10
20
16
12
1.8
1.4
0.6
8
4
0
1
1.8
1.6
1.4
1.2
-50
2
1
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
-50
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
= -10V
= -5A
v.s. Junction Temperature
T
-V
Junction Temperature
T
j
j
2
DS
0
, Junction Temperature (
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
50
4
50
T
A
=150
AP9435GM
o
C
o
100
100
6
o
C)
C)
V
G
=-4.0V
-7.0V
-5.0V
-4.5V
-10V
150
150
8
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